| PART |
Description |
Maker |
| W98M964001EUX W98M9640 |
Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| BCAXXXX |
Mini size of Discrete semiconductor elements
|
ETC
|
| B1500A |
Semiconductor Device Analyzer
|
Agilent(Hewlett-Packard)
|
| BXY43-T1 BXY43 BXY43-FP BXY43-P1 BXY43-T |
PUBLICATIONS, BOOKS RoHS Compliant: NA
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702A674 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
|
Siemens Semiconductor G...
|
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
SIRENZA[SIRENZA MICRODEVICES]
|
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| MMBT8550 MMBT8050 M28S KTC5242 BA114ES6R MMBT1015 |
Mini Size Discrete Semiconductor Elements
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT01; Number of Contacts:3; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight
THYRISTOR 75V 100A SMB DO-214AA
Multiconductor Cable; Number of Conductors:4; Conductor Size AWG:20; No. Strands x Strand Size:19 x 32; Jacket Material:Teflon; Approval Bodies:UL NEC/CUL,CEC; Capacitance:31.7pF/ft; Conductor Material:Copper RoHS Compliant: Yes
Mini size of Discrete semiconductor elements 迷你型离散半导体元件
Multiconductor Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Material:Teflon; Approval Bodies:UL NEC/CUL,CEC; Capacitance:27.4pF/ft; Conductor Material:Copper RoHS Compliant: Yes 迷你型离散半导体元件
|
N/A
Power Innovations Limited
ETC
Sinyork Co Ltd
N.A.
Electronic Theatre Controls, Inc.
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
